首页   按字顺浏览 期刊浏览 卷期浏览 Deep‐level transient spectroscopy studies of defects in GaAs‐AlGaAs super...
Deep‐level transient spectroscopy studies of defects in GaAs‐AlGaAs superlattices

 

作者: P. A. Martin,   K. Hess,   M. Emanuel,   J. J. Coleman,  

 

期刊: Journal of Applied Physics  (AIP Available online 1986)
卷期: Volume 60, issue 8  

页码: 2882-2885

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337073

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present preliminary results of a study of defects in GaAs‐AlGaAs superlattices using deep‐level transient spectroscopy (DLTS). A dramatic difference is observed between the DLTS spectra of two superlattices when the superlattice period is doubled. This is explained by the presence of miniband conduction in the case of the smaller period and its absence in the case of the larger, and by the consequent difference in the distribution of electrons in the superlattice. Observed activation energies must be reinterpreted for comparisons to bulk material.

 

点击下载:  PDF (326KB)



返 回