Deep‐level transient spectroscopy studies of defects in GaAs‐AlGaAs superlattices
作者:
P. A. Martin,
K. Hess,
M. Emanuel,
J. J. Coleman,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 8
页码: 2882-2885
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337073
出版商: AIP
数据来源: AIP
摘要:
We present preliminary results of a study of defects in GaAs‐AlGaAs superlattices using deep‐level transient spectroscopy (DLTS). A dramatic difference is observed between the DLTS spectra of two superlattices when the superlattice period is doubled. This is explained by the presence of miniband conduction in the case of the smaller period and its absence in the case of the larger, and by the consequent difference in the distribution of electrons in the superlattice. Observed activation energies must be reinterpreted for comparisons to bulk material.
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