On the theory of logorithmic silicon diodes
作者:
M.J.Buckingham,
E.A.Faulkner,
期刊:
Radio and Electronic Engineer
(IET Available online 1969)
卷期:
Volume 38,
issue 1
页码: 33-39
年代: 1969
DOI:10.1049/ree.1969.0073
出版商: IERE
数据来源: IET
摘要:
A logarithmic diode is defined as one showing a forward characteristicIα exp (eV/mkT) where the factormis independent of voltage (though not necessarily of temperature) over at least four decades of current. Many commercial diodes show such a characteristic withmin the region of 1.5. It is shown that this behaviour cannot be explained by the theory of Sah, Noyce and Shockley and a modified theory is proposed, based on the assumption that the diode current is predominantly due to Shockley-Read-Hall traps non-uniformly distributed in the depletion layer. The theory is shown to be consistent with observed currentvoltage-temperature characteristics of a number of specimens.
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