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On the theory of logorithmic silicon diodes

 

作者: M.J.Buckingham,   E.A.Faulkner,  

 

期刊: Radio and Electronic Engineer  (IET Available online 1969)
卷期: Volume 38, issue 1  

页码: 33-39

 

年代: 1969

 

DOI:10.1049/ree.1969.0073

 

出版商: IERE

 

数据来源: IET

 

摘要:

A logarithmic diode is defined as one showing a forward characteristicIα exp (eV/mkT) where the factormis independent of voltage (though not necessarily of temperature) over at least four decades of current. Many commercial diodes show such a characteristic withmin the region of 1.5. It is shown that this behaviour cannot be explained by the theory of Sah, Noyce and Shockley and a modified theory is proposed, based on the assumption that the diode current is predominantly due to Shockley-Read-Hall traps non-uniformly distributed in the depletion layer. The theory is shown to be consistent with observed currentvoltage-temperature characteristics of a number of specimens.

 

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