Low threshold GaInAsP/InP buried‐heterostructure lasers with a chemically etched and mass‐transported mirror
作者:
Z. L. Liau,
J. N. Walpole,
D. Z. Tsang,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 10
页码: 945-947
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94606
出版商: AIP
数据来源: AIP
摘要:
The mass‐transport technique has been used to improve chemically etched mirrors on GaInAsP/InP double heterostructure wafers. Vertical and flat mirror facets have been obtained. Buried‐heterostructure lasers fabricated with one such mirror and the other mirror cleaved show high device yield with threshold currents as low as 6 mA and differential quantum efficiency as high as 33%.
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