首页   按字顺浏览 期刊浏览 卷期浏览 Very low density two-dimensional hole gas in an inverted GaAs/AlAs interface
Very low density two-dimensional hole gas in an inverted GaAs/AlAs interface

 

作者: Y. Hanein,   Hadas Shtrikman,   U. Meirav,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 11  

页码: 1426-1428

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118596

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We utilize an inverted heterostructure grown on (311)A GaAs to realize a two-dimensional hole gas (2DHG) with a built-in back gate. The density of the 2DHG is easily and reproducibly varied between5×109and5×1011 cm−2. The mobility of the 2DHG is highly anisotropic in the (311)A plane. ©1997 American Institute of Physics.

 

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