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Single‐crystal CdTe with low absorption at 10.6 &mgr;m for use as ir laser windows

 

作者: F. A. Selim,   F. A. Kroger,  

 

期刊: Journal of Applied Physics  （AIP Available online 1978）
卷期: Volume 49, issue 7  

页码: 3737-3741

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325425

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Optimum conditions for the preparation of CdTe with minimum absorption at 10.6 &mgr;m are determined, paying attention both to type and concentration of dopants and the conditions of annealing. Doping with indium and annealing at 700 °C followed by quenching led to material with the smallest absorption coefficient at 10.6 &mgr;m of 8×10−4cm−1.

 

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