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Boron evaporator for doping silicon thin films

 

作者: M. W. Denhoff,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 5  

页码: 1035-1037

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584956

 

出版商: American Vacuum Society

 

关键词: BORON;EVAPORATORS;DESIGN;FABRICATION;HEATING;ELECTRON BEAMS;RADIANT HEATERS;SILICON;POLYCRYSTALS;THIN FILMS;CRYSTAL DOPING;SIMS;Si:B;Si:B2O3

 

数据来源: AIP

 

摘要:

A clean, stable boron evaporator has been designed and constructed. The design involves heating one end of a boron rod by a combination of radiation and electron beam heating. The evaporator was tested by doping polycrystalline silicon thin films by coevaporation. Doping levels up to 2×1020cm−3were obtained with 100% electrical activation. No metallic contamination was found in the thin films using secondary ion mass spectroscopy.

 

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