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High-carrier-density electron dynamics in low-temperature-grown GaAs

 

作者: T. S. Sosnowski,   T. B. Norris,   H. H. Wang,   P. Grenier,   J. F. Whitaker,   C. Y. Sung,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 24  

页码: 3245-3247

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119138

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Pump-probe differential transmission measurements examine high-carrier-density phenomena in as-grown and annealed GaAs samples grown at temperatures from 210 to 270 °C. We observe trap saturation and Auger recombination, and accurately model the measurements on annealed samples with a simple two level rate equation, allowing us to extract the trapped-electron lifetimes. ©1997 American Institute of Physics.

 

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