Electron‐phonon interaction and tunneling escape process in GaAs/AlAs quantum wells
作者:
A. Herna´ndez‐Cabrera,
P. Aceituno,
H. Cruz,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 10
页码: 6147-6150
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360558
出版商: AIP
数据来源: AIP
摘要:
In this work, we have numerically integrated in space and time the effective mass Schro¨dinger equation for an electron in a GaAs/AlAs quantum well. Considering the electron–phonon interaction and an external electric field, we have studied the electronic tunneling escape process from semiconductor quantum wells. In this way, electronic lifetimes have been obtained at different well widths and applied electric fields. ©1995 American Institute of Physics.
点击下载:
PDF
(515KB)
返 回