Grain growth of polycrystalline silicon films on SiO2by cw scanning electron beam annealing
作者:
Kenji Shibata,
Tomoyasu Inoue,
Tadahiro Takigawa,
Shintaro Yoshii,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 8
页码: 645-647
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92839
出版商: AIP
数据来源: AIP
摘要:
Reduced pressure, chemical vapor deposited polycrystalline silicon films (5000 A˚ thick) over thermally grown SiO2on (100) silicon wafers are recrystallized by a scanning electron microscope modified electron beam annealing system. On the basis of transmission electron microscope bright‐field images and electron diffraction patterns, large grained polycrystalline silicon films of 20‐&mgr;m average grain size are obtained after electron beam annealing. Electron beam current, scanning rate, and annealing repetition are found to be important parameters in the recrystallization. Optimum values for them are from 1.6 to 1.9 mA, from 40 to 80 cm/sec, and from 5 to 10 times, respectively.
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