Etching of SiO2in a narrowly confined plasma of high power density
作者:
K. M. Eisele,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1986)
卷期:
Volume 4,
issue 5
页码: 1227-1232
ISSN:0734-211X
年代: 1986
DOI:10.1116/1.583486
出版商: American Vacuum Society
关键词: ETCHING;SILICON OXIDES;MAGNETIC FIELD EFFECTS;ANISOTROPY;HEXANE;NITROGEN;SiO2
数据来源: AIP
摘要:
An etch process for SiO2in a C6F14+N2plasma at 1 Torr pressure and with a power of 10 W/cm3was examined for its etch rate dependence on gas composition, pressure, and electrode separation. Rates larger than 1 μm/min were obtained. The selectivity with respect to silicon could be made infinitely high by choosing various gas mixtures. An axial magnetic field increased the etch rate by 20%. The process was highly anisotropic. Ion and neutral mass spectroscopy was applied to illuminate the differences between this process and the conventional cathode coupled process (RIE) at pressures of 0.05 Torr.
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