Saturation velocity determination for In0.53Ga0.47As field‐effect transistors
作者:
S. Bandy,
C. Nishimoto,
S. Hyder,
C. Hooper,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 10
页码: 817-819
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92143
出版商: AIP
数据来源: AIP
摘要:
The fabrication of Schottky‐gate field‐effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band‐gap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given, which shows over a factor of 2 higher saturated velocity for InGaAs in comparison to GaAs when used as a FET material.
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