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A 1 : 1 electron stepper

 

作者: R. Ward,   A. R. Franklin,   I. H. Lewin,   P. A. Gould,   M. J. Plummer,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1986)
卷期: Volume 4, issue 1  

页码: 89-93

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583401

 

出版商: American Vacuum Society

 

关键词: MASKING;PHOTOCATHODES;WAFERS;ALIGNMENT;ELECTRON BEAMS;RESOLUTION;VLSI;BACKSCATTERING;ABERRATIONS;BEAM OPTICS;LITHOGRAPHY;ETCHING;SILICON

 

数据来源: AIP

 

摘要:

A new approach to electron projection is described which is suited to the design of an electron stepper. Electrons are emitted from the clear areas of a Cr mask by the interaction of short wavelength UV radiation with a CsI photocathode. A grid separates mask from wafer, creating a field‐free region into which conventional electron backscatter detectors may be placed to provide alignment signals. The system employs uniform electric and magnetic fields and the image size is limited only by the physical size of the grid. We calculate the distortion at the grid apertures and show that high resolution may be achieved by positioning the grid at the first magnetic focus and the wafer at the second. Experiments have been carried out in which submicron resolution is demonstrated and alignment signals are generated.

 

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