Experimental results are presented to support the contention that the light output of SiC electroluminescent diodes can be dominated by radiative tunneling over a wide temperature range. A spectral peak shift to higher photon energy with increasing junction voltage has been observed, as well as a temperature‐independent slope of the light intensity‐voltage curves. Both of these properties are characteristic of radiative tunneling. In addition, the value of the temperature‐independent slope agrees with that calculated from a simple tunneling model using data from capacitance measurements. An energy‐band scheme is proposed which leads to the tentative conclusion that the radiative recombination process is donor‐acceptor pair recombination of tunneling carriers in the depletion layer.