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Dislocation transport in shock‐loaded single crystals

 

作者: J. N. Johnson,  

 

期刊: Applied Physics Letters  (AIP Available online 1987)
卷期: Volume 50, issue 1  

页码: 28-30

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98116

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It has been previously observed that the impact surface of [100] shock‐loaded lithium fluoride is a strong source of dislocations. These dislocations, on one side of the impact surface, are nearly all of the same sign and move in the same direction when the driving (impact) stress is maintained. This produces an excess of like‐signed dislocations between the impact surface and the advancing planar shock front. It is shown that inclusion of dislocation transport effects in the equation for dislocation regeneration is required when surface sources are present. A derivation of the general expression of dislocation transport is presented along with some specific results for [100] loaded lithium fluoride. These results have important consequences regarding proper analysis of elastic precursor decay and rate‐dependent plastic deformation in shock‐loaded solids.

 

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