Effect of interposed Cr layer on the thermal stability of Cu/Ta/Si structure
作者:
Dong‐Soo Yoon,
Hong Koo Baik,
Byoung‐Sun Kang,
Sung‐Man Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 11
页码: 6550-6552
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363676
出版商: AIP
数据来源: AIP
摘要:
The thermal stability of Cu/Ta/Cr/Si structure is analyzed and compared with that of Cu/Ta/Si and Cu/Ta/Cr/Ta/Si structures. The Cu/Ta/Si and Cu/Ta/Cr/Ta/Si systems retained their structures up to 600 °C without increase in resistivity but the Cu/Ta/Cr/Si structure was degraded after annealing at 400 °C. In the latter case, the degradation was dominated by the outdiffusion of free Si, probably released from the substrate in the formation of CrSi2. It is suggested that the released Si is reactive and its outdiffusion through Ta layer is facilitated by the high affinity of Si toward Ta, as expected from the large negative value of mixing enthalpy between Ta and Si. ©1996 American Institute of Physics.
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