Growth of colossal magnetoresistance thin films on silicon
作者:
Z. Trajanovic,
C. Kwon,
M. C. Robson,
K.‐C. Kim,
M. Rajeswari,
R. Ramesh,
T. Venkatesan,
S. E. Lofland,
S. M. Bhagat,
D. Fork,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 7
页码: 1005-1007
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117967
出版商: AIP
数据来源: AIP
摘要:
We are able to grow high quality La0.67Sr0.33MnO3(LSMO) colossal magnetoresistive (CMR) thin films on Y‐stabilized zirconia (YSZ) buffered (100) Si substrates using a Bi4Ti3O12texturing and lattice matching layer. The CMR films have very high structural perfection and show excellent transport and ferromagnetic properties, including the almost full saturation magnetization values and narrow ferromagnetic resonance peaks (15 Oe at 290 K). The lattice matching template/buffer layer approach is suitable for the high quality CMR films on Si. A close correlation between the magnetic hysteresis loop and the field dependence of MR is observed at lower temperatures. ©1996 American Institute of Physics.
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