Electrode-dielectric interface in thin-film DRAMs for ULSI
作者:
J.F. Scott,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 5,
issue 2
页码: 103-106
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408019334
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Mechanisms of leakage currents and d.c. breakdown are reviewed for several high-dielectric films in prototype use for ULSI DRAMs, including barium strontium titanate, lead zirconate titanate, and proprietary materials, with special emphasis upon electrode interface phenomena. The early theory of Von Hippel is reviewed, and attention is paid to the modified boundary conditions to the thermal breakdown equation given below for the finite dimensions of capacitors in real ULSI DRAMs (EBis the breakdown field):
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