Using an rf‐magnetron sputtering method, highlyc‐axis‐oriented La‐modified PbTiO3(PLT) thin films with compositions of Pb1−xLaxTi1−x/4O3, wherex=0.05, 0.10, and 0.15, have been obtained on MgO single‐crystal and epitaxial Pt thin‐film substrates under conditions of low gas pressure and low deposition rate. The degree ofc‐axis orientation of the PLT films decreases, and the tetragonality of PLT becomes smaller with increasing La content. The Curie point of the films decreases at a rate of 18 °C/at. % of La with an increase of La content.D‐Ehysteresis loops were observed, and these became slim and symmetric with increasing La. It was found that significant pyroelectric currents are detected on all as‐grown specimens even without a poling treatment, and the directions are the same in all specimens. Relative dielectric constant &egr;rdecreases, and pyroelectric coefficient &ggr; increases with increasing degree ofc‐axis orientation. &egr;rand &ggr; became large with increase of La content in the films. Considering the figure of merit for pyroelectric infrared detection and the temperature coefficient of &ggr;, it was concluded that PLT films withx=0.10 were good material for pyroelectric infrared detectors.