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Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition

 

作者: Mitsuhiro Shigeta,   Kenji Nakanishi,   Yoshihisa Fujii,   Katsuki Furukawa,   Akitsugu Hatano,   Atsuko Uemoto,   Akira Suzuki,   Shigeo Nakajima,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 23  

页码: 1684-1685

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97767

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Epitaxial growth of &bgr;‐SiC on Si(511) substrates has been carried out. Single‐crystalline &bgr;‐SiC films without warpage and cracking are grown by chemical vapor deposition. The epitaxial orientation of the film is determined using x‐ray precession camera. The orientation is inclined as SiC(411)//Si(511) coincident with the [011¯] axis, which should be compared with the parallel epitaxial growth on Si(100) or Si(111).

 

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