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Surface related core level shifts for the Si(111)√3×√3: Al system

 

作者: J. N. Andersen,   C. Wigren,   U. O. Karlsson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 4  

页码: 2384-2387

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585707

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM;LAYERS;SILICON;SURFACE RECONSTRUCTION;PHOTOELECTRON SPECTROSCOPY;SYNCHROTRON RADIATION;ELECTRONIC STRUCTURE;CORE LEVELS;Si:Al

 

数据来源: AIP

 

摘要:

The Si(111)√3×√3:Al reconstruction has been studied by surface sensitive high resolution core level spectroscopy. It is shown that three components are needed to fit the Si 2pspectra. The Al 2pemission is found to consist of more than one component and it is argued that this is related to defects in the overlayer.

 

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