The generation and propagation of dislocations in GaAsP‐InGaAs strained‐layer superlattices have been studied using x‐ray topography and electron‐beam‐induced current in the scanning electron microscopy. It is shown that three‐dimensional information about dislocations in the substrate, as well as in subsequently grown epilayers, can be obtained via a one‐to‐one correlation of images obtained from these two techniques. Various types of threading and misfit dislocations are identified and their location specified.