High power cw operation of GaAs/GaAlAs surface‐emitting lasers mounted in the junction‐up configuration
作者:
S. S. Ou,
M. Jansen,
J. J. Yang,
M. Sergant,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 9
页码: 1037-1039
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106337
出版商: AIP
数据来源: AIP
摘要:
High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface‐emitting lasers with all dry etched micromirrors in the junction‐up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation.
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