Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide
作者:
H. Kawarada,
C. Wild,
N. Herres,
R. Locher,
P. Koidl,
H. Nagasawa,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 8
页码: 3490-3493
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365047
出版商: AIP
数据来源: AIP
摘要:
We have deposited epitaxial diamond films with very low angular spread on epitaxial &bgr;-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the &bgr;-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity. ©1997 American Institute of Physics.
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