Small signal ac analysis of a silicon doping superlattice under reverse bias
作者:
K. H. Teo,
J. N. McMullin,
D. Landheer,
M. W. Denhoff,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 9
页码: 4674-4680
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346179
出版商: AIP
数据来源: AIP
摘要:
A simple linear electrical circuit model is developed to study the ac characteristics of a doping superlattice with selective contacts. Small signal ac measurements at different frequencies were carried out on silicon doping superlattices under reverse bias. Parameters such as capacitance, doping profile, ac conductance, and leakage resistance of a doping superlattice calculated from the model are shown to agree well with the experiment.
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