Photoluminescence of modulation‐doped ordered–disordered GaInP2homojunctions: Intrinsic versus extrinsic emissions
作者:
F. A. J. M. Driessen,
P. R. Hageman,
S. M. Olsthoorn,
L. J. Giling,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 5
页码: 586-588
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114021
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence (PL) measurements are reported on modulation‐doped ordered‐GaInP2/ disordered‐GaInP2homojunctions. These junctions exhibit extremely high carrier densities of the two‐dimensional (2D) electron gas. A luminescence peak that involves recombination of these intrinsic 2D electrons and photoexcited holes shows a very large redshift as a result of the spatially separated carriers. However, no inverted S shaped behavior of PL energy is observed for this signal upon increasing temperature. This result affirms that the inverted S PL behavior of bulk ordered GaInP2has an extrinsic nature. ©1995 American Institute of Physics.
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