Low leakage currentp+/nstep junctions with mechanically stable ohmic contacts top+layer are fabricated onn‐InP wafers simultaneously by a simple procedure consisting of vacuum evaporation of Ni, Zn, and Au followed by a short heat treatment at 340 °C. Current‐voltage and capacitance‐voltage measurements, secondary ion mass spectroscopy, and deep level transient spectroscopy are employed to characterize the diodes fabricated and to understand their structure.