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Temperature dependent transport measurements on strained Si/Si1−xGexresonant tunneling devices

 

作者: Ulf Gennser,   V. P. Kesan,   S. S. Iyer,   T. J. Bucelot,   E. S. Yang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 4  

页码: 2059-2063

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585777

 

出版商: American Vacuum Society

 

关键词: SILICON;SILICON ALLOYS;GERMANIUM ALLOYS;TUNNEL DIODES;STRAINS;RESONANCE;TRANSPORT PROCESSES;TEMPERATURE DEPENDENCE;HOLES;QUANTUM WELL STRUCTURES;MOLECULAR BEAM EPITAXY;IV CHARACTERISTIC;VERY LOW TEMPERATURE;LOW TEMPERATURE;MEDIUM TEMPERATURE

 

数据来源: AIP

 

摘要:

Temperature dependent transport through strained Si/SiGe hole resonant tunneling diodes has been studied. A quantitative measure of the different current components due to the conduction through the light hole and heavy hole resonant states at any particular bias and temperature has been obtained, and energy values for states in the SiGe well have been extracted. We also show that the quenching of the negative differential resistance at room temperature in hole resonant tunneling diodes is due to thermally assisted tunneling through higher resonant states.

 

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