The drift velocity of hot electrons in ann‐GaAs quantum well is calculated with the exact distribution function deduced from the Boltzmann integral equation. The interaction of the charge carriers with surface and bulk polar optical phonons and ionized impurities is considered in the calculation. The influence of intercarrier collisions as well as the quantum‐well width on the distribution function and on the drift velocity is analyzed systematically. The theoretical results are compared with recent experimental data deduced from pulsed Hall measurements.