Deep level transient spectroscopy has been employed to determine the defect energy levels, capture cross sections, and trap densities in Si‐doped vapor phase epitaxy GaAs both before and after irradiation by 1 MeV electrons at room temperature for electron fluence ranging from 1.1×1014to 5.0×1015e cm−2. The results indicate that the irradiated samples have an electron trap atEc‐0.334 eV(EL6) in addition to the two electron traps atEc‐0.815 eV(EL2) andEc‐0.420 eV(EL3) which are present in the nonirradiated sample. The density of the EL6 trap increases monotonically with irradiation fluence from 6.7×1013to 24.4×1013cm−3as electron fluence is increased from 1.1×1014to 3.1×1014e cm−2. In contrast, both the EL2 and EL3 trap densities were found to be only moderately affected by electron irradiation with trap densities slightly greater than the nonirradiated sample. These results, along with the fact that the EL6 trap was not observed in the nonirradiated sample, strongly suggest that this trap is created by the electron irradiation. In addition to creating the EL6 trap, electron irradiation results in a nonexponential transient for the EL2 deep level atEc‐0.815 eV which can be resolved into the sum of two exponential transients arising from two closely spaced deep levels atEc‐0.815 eV andEc‐0.843 eV.