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On the nature of the radiation defects with level Ec–0.22 eV in n-type silicon

 

作者: L.A. Kazakevich,   V.I. Kuznetsov,   P.F. Lugakov,  

 

期刊: Radiation Effects  （Taylor Available online 1985）
卷期: Volume 87, issue 4  

页码: 147-154

 

ISSN:0033-7579

 

年代: 1985

 

DOI:10.1080/01422448608209715

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Radiation-induced accumulation and annealing processes of radiation defects with level Ec–0,22 eV in silicon of various perfection are analysed and it is concluded that they consist of oxygen and two vacancies (oxygen-divacancy complex).

 

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