GaN linear electro‐optic effect
作者:
X.‐C. Long,
R. A. Myers,
S. R. J. Brueck,
R. Ramer,
K. Zheng,
S. D. Hersee,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 10
页码: 1349-1351
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115547
出版商: AIP
数据来源: AIP
摘要:
Measurements of the linear (Pockels) electro‐optical coefficient of wurtzite GaN are reported. The values for the electro‐optic coefficientsr33andr31are 1.91±0.35 and 0.57±0.11 pm/V at 633 nm, respectively, in agreement with extrapolations from measured second‐harmonic generation coefficients (&khgr;33(2)=−20±6 pm/V and &khgr;31(2)=10±3 pm/V) suggesting that the dominant contributions are electronic in origin. Measurements were performed using a Mach–Zehnder interferometer with LiNbO3as a reference material. Piezoelectric effects were also observed. ©1995 American Institute of Physics.
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