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GaN linear electro‐optic effect

 

作者: X.‐C. Long,   R. A. Myers,   S. R. J. Brueck,   R. Ramer,   K. Zheng,   S. D. Hersee,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 67, issue 10  

页码: 1349-1351

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115547

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Measurements of the linear (Pockels) electro‐optical coefficient of wurtzite GaN are reported. The values for the electro‐optic coefficientsr33andr31are 1.91±0.35 and 0.57±0.11 pm/V at 633 nm, respectively, in agreement with extrapolations from measured second‐harmonic generation coefficients (&khgr;33(2)=−20±6 pm/V and &khgr;31(2)=10±3 pm/V) suggesting that the dominant contributions are electronic in origin. Measurements were performed using a Mach–Zehnder interferometer with LiNbO3as a reference material. Piezoelectric effects were also observed. ©1995 American Institute of Physics.

 

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