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Excess carrier lifetimes in the silicon doping superlattice

 

作者: G. A. Leith,   S. Zukotynski,   D. Landheer,   M. W. Denhoff,   M. Buchanan,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 16  

页码: 1558-1560

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101312

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The excess carrier lifetimes in a silicon doping superlattice were investigated by measuring the decay of both the photovoltage and the photoconductance. The photovoltage decayed exponentially with a time constant of 1 s at liquid‐nitrogen temperature. In addition, persistent photoconductivity extending over many hours was observed in then‐type layers.

 

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