Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs{111} surfaces
作者:
Keiji Ueno,
Toshihiro Shimada,
Koichiro Saiki,
Atsushi Koma,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 4
页码: 327-329
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102817
出版商: AIP
数据来源: AIP
摘要:
Layered transition metal dichalcogenides (MoSe2, NbSe2) have been heteroepitaxially grown on (NH4)2Sx(x&bartil;2) treated GaAs(111)Ga, GaAs(∼(111))As surfaces in spite of the large difference in their crystal structures. Theinsituobservation of reflection high‐energy electron diffraction has shown that the grown film has its own lattice constant even from the first layer. The lattice matching condition, which is severely restricting in the usual heteroepitaxial growth case, is greatly relaxed in the present system because only weak van der Waals forces exist between the grown film and the substrate. This results from the fact that sulfur atoms regularly terminate dangling bonds on the GaAs surface after the (NH4)2Sxtreatment.
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