Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy
作者:
Leye Aina,
Mike Mattingly,
Bob Potter,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 492-493
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103630
出版商: AIP
数据来源: AIP
摘要:
We have grown modulation‐doped AlInAs/InP heterostructures with two‐dimensional electron gases. Hall measurements and Shubnikov‐de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, 2300 cm2/V s at 2, 77, and 300 K, with electron concentrations as high as 1.5×1012cm−2. These results demonstrate the potential of the AlInAs/InP heterostructure for power microwave applications.
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