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Beryllium implantation doping of InGaAs

 

作者: B. Tell,   R. F. Leheny,   A. S. H. Liao,   T. J. Bridges,   E. G. Burkhardt,   T. Y. Chang,   E. D. Beebe,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 4  

页码: 438-440

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94758

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ion implantation doping of Be acceptors inn‐In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is achieved with rapid (30 s) thermal anneals compared to conventional 15‐min furnace anneals, resulting inp‐njunction depths less than 1 &mgr;m with peak acceptor concentrations greater than 1018cm−3. Electrical profiles andp‐njunction characteristics are presented.

 

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