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Self‐interstitials and the 935 cm−1band in silicon

 

作者: H. J. Stein,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 55, issue 9  

页码: 870-872

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101625

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cm−1infrared absorption band under neutron irradiation while that for a 965 cm−1band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous assignment of the 935 cm−1band to a center with interstitial Si trapped by interstitial oxygen.

 

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