On the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe
作者:
I. Czech,
T. Clarysse,
W. Vandervorst,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 298-303
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587157
出版商: American Vacuum Society
关键词: SURFACE CONDUCTIVITY;ELECTRIC IMPEDANCE;ELECTRIC PROBES;EPITAXIAL LAYERS;CHARGE CARRIERS;SEMICONDUCTOR JUNCTIONS;IMPURITIES
数据来源: AIP
摘要:
Despite the rapidly increasing capabilities of Poisson deconvolution schemes for spreading resistance (SR) measurements, carrier spilling effects will remain a serious problem for the interpretation of SR profiles for structures involving significant forward spilling such as epilayers. In order to remedy this situation a spreading impedance probe is being developed allowing to influence the internal spilling by an external dc field, while performing an impedance measurement at a small ac bias. Three‐dimensional calibration surfaces representing resistance versus resistivity and dc bias determine the probe characteristics. Results for apwell and ap⋅p+epilayer will be discussed.
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