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On the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe

 

作者: I. Czech,   T. Clarysse,   W. Vandervorst,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1994)
卷期: Volume 12, issue 1  

页码: 298-303

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587157

 

出版商: American Vacuum Society

 

关键词: SURFACE CONDUCTIVITY;ELECTRIC IMPEDANCE;ELECTRIC PROBES;EPITAXIAL LAYERS;CHARGE CARRIERS;SEMICONDUCTOR JUNCTIONS;IMPURITIES

 

数据来源: AIP

 

摘要:

Despite the rapidly increasing capabilities of Poisson deconvolution schemes for spreading resistance (SR) measurements, carrier spilling effects will remain a serious problem for the interpretation of SR profiles for structures involving significant forward spilling such as epilayers. In order to remedy this situation a spreading impedance probe is being developed allowing to influence the internal spilling by an external dc field, while performing an impedance measurement at a small ac bias. Three‐dimensional calibration surfaces representing resistance versus resistivity and dc bias determine the probe characteristics. Results for apwell and ap⋅p+epilayer will be discussed.

 

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