We report the first integrated injection‐locked high‐power continuous‐wave diode laser array with an on‐chip independently controlled master laser. This device emits a near‐diffraction‐limited (0.5° full width at half maximum) single‐lobed far‐field emission beam at single‐facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single‐lobed emission over an angular range of 0.50° at a rate of −1.2×10−2deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high‐power diode laser devices.