Formation of buried TiN in glass by ion implantation to reduce solar load
作者:
Gary S. Was,
Victor Rotberg,
Dennis Platts,
John Bomback,
Robert Benoit,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 5
页码: 2768-2773
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363194
出版商: AIP
数据来源: AIP
摘要:
Ti and N were implanted into soda lime glass to doses up to 4.5×1017cm−2to reduce solar load and infrared transmission. Analysis of the Ti+N implant distributions by Rutherford backscattering spectrometry and x‐ray photoelectron spectroscopy (XPS) revealed profiles which closely followed each other as designed by the selection of implant energies. XPS, x‐ray diffraction, and selected area electron diffraction in transmission electron microscopy also confirmed the existence of a crystalline B1‐type, cubic TiN layer, 140 nm wide, at doses greater than 9×1016cm−2. Optical measurements showed that the fraction of infrared radiation reflected was increased by almost a factor of 4 compared to an increase of 1.8 in the visible region. The percentage of the total solar energy rejected reached 80% at the highest dose, indicating that the buried TiN layer is highly effective in reducing solar energy transmission. ©1996 American Institute of Physics.
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