首页   按字顺浏览 期刊浏览 卷期浏览 Schottky barrier formation in a Au/Si nanoscale system: A local density approximation s...
Schottky barrier formation in a Au/Si nanoscale system: A local density approximation study

 

作者: V. G. Zavodinsky,   I. A. Kuyanov,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 81, issue 6  

页码: 2715-2719

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.364298

 

出版商: AIP

 

数据来源: AIP

 

摘要:

First-principles local density cluster calculations show that a Schottky junction may be formed in a nanoscale Au–Si(111) systems. The calculated Schottky barrier height value depends on the nanosystem’s geometry and varies from 0.5 to 1.35 eV. The total energy calculations show that the metallic gold/silicon system is unstable if the thickness of the gold is more than 2–3 monolayers. ©1997 American Institute of Physics.

 

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