Schottky barrier formation in a Au/Si nanoscale system: A local density approximation study
作者:
V. G. Zavodinsky,
I. A. Kuyanov,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 6
页码: 2715-2719
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364298
出版商: AIP
数据来源: AIP
摘要:
First-principles local density cluster calculations show that a Schottky junction may be formed in a nanoscale Au–Si(111) systems. The calculated Schottky barrier height value depends on the nanosystem’s geometry and varies from 0.5 to 1.35 eV. The total energy calculations show that the metallic gold/silicon system is unstable if the thickness of the gold is more than 2–3 monolayers. ©1997 American Institute of Physics.
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