High‐voltage MOSFET bipolar square‐wave generator
作者:
T. D. Usher,
Grant A. McAuley,
期刊:
Review of Scientific Instruments
(AIP Available online 1993)
卷期:
Volume 64,
issue 7
页码: 2027-2030
ISSN:0034-6748
年代: 1993
DOI:10.1063/1.1143994
出版商: AIP
数据来源: AIP
摘要:
The construction of a high‐voltage (up to 1000 V) bipolar metal‐oxide‐semiconductor field‐effect transistor square‐wave generator is described. This generator is capable of producing both positive and negative going square waves with variable amplitude, repetition rate, and width. The circuit was designed for ferroelectrics research, however other applications are possible. The rise time of the prototype was 200 ns which was quite satisfactory for the present ferroelectric research project however the rise time can be decreased to 50 ns if necessary. The reader with a modest knowledge of electronics should be able to construct the circuit. Possible pitfalls and critical points are discussed.
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