首页   按字顺浏览 期刊浏览 卷期浏览 High‐purity GaSb epitaxial layers grown from Sb‐rich solutions
High‐purity GaSb epitaxial layers grown from Sb‐rich solutions

 

作者: C. Anayama,   T. Tanahashi,   H. Kuwatsuka,   S. Nishiyama,   S. Isozumi,   K. Nakajima,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 3  

页码: 239-240

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102842

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Undoped GaSb crystals with mirror‐like surfaces were obtained by liquid phase epitaxy from Sb‐rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016cm−3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.

 

点击下载:  PDF (244KB)



返 回