Lattice relaxation of GaAs islands grown on Si(100) substrate
作者:
Koyu Asai,
Kazuhito Kamei,
Hisashi Katahama,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 5
页码: 701-703
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119834
出版商: AIP
数据来源: AIP
摘要:
Initial stage of lattice relaxation of GaAs islands grown on Si(100) substrate were investigated by combination of reflection high-energy electron diffraction and molecular beam epitaxy. In addition to the lattice constants in horizontal direction(a∥)to the substrate surface, we first measured directly those in vertical one(a⊥).At the beginning of the growth, the rapid increase ofa∥and the larger Poisson’s ratios than that of bulk were observed. Atomic bond flexibility and extension induced by surface effects might cause this rapid increase ofa∥and large Poisson’s ratios. ©1997 American Institute of Physics.
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