Hydrogen effusion from evaporated Si1−xSnx:H (0≤x≤0.2) amorphous semiconductors
作者:
M. Vergnat,
N. Hadj Zoubir,
S. Houssai¨ni,
G. Marchal,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 13
页码: 1647-1649
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113880
出版商: AIP
数据来源: AIP
摘要:
The release of hydrogen from Si1−xSnx:H (0≤x≤0.2) amorphous semiconductors prepared by reactive evaporation on substrates maintained at 77 K is monitored by effusion experiments. The effusion peaks are associated with desorption from voids. The deconvolution of these peaks allows one to deduce the different atomic configurations containing hydrogen and to determine their stability and their Gibbs free energy of desorption. ©1995 American Institute of Physics.
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