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Furnace gas‐phase chemistry of silicon oxynitridation in N2O

 

作者: K. A. Ellis,   R. A. Buhrman,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 68, issue 12  

页码: 1696-1698

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.115909

 

出版商: AIP

 

数据来源: AIP

 

摘要:

During furnace N2O‐based silicon oxynitride growth, the total concentration of NOxspecies varies strongly with the flow rate of N2O. At low flow rates the N2O decomposes at least partially in the cooler region of the furnace near the gas inlet. This results in lower than expected NOx(x=1,2) concentrations in the oxidizing ambient. At high flow rates, the exothermic decomposition of N2O can heat the inlet region of the furnace, resulting in decomposition at a temperature above the nominal furnace temperature and higher than expected NOxconcentrations. These effects can lead to a substantial variation in the concentration of N in the oxynitride as a function of N2O flow. ©1996 American Institute of Physics.

 

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