We report, for the first time, the direct write laser patterning of highly conductive Al from a liquid precursor, triisobutylaluminum (TIBA). Al wires were written on Si with a scanned Ar+laser from liquid TIBA at speeds of up to several mm/s. Wires 3 &mgr;m wide by 1 &mgr;m high with a resistivity of 5.6 &mgr;&OHgr; cm were routinely achievable.