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Mg+implantation into AlxGa1−xAs

 

作者: Shigeo Ashigaki,   Yunosuke Makita,   Toshihiko Kanayama,   Toshio Tsurushima,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 5  

页码: 3892-3893

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.331092

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ion implantation of Mg into AlxGa1−xAs was carried out at room temperature. After annealing at 700 °C, GaAs showed nearly 100% electrical activation, however, Al0.60Ga0.40As showed only 15% electrical activation. We explain this result in terms of increasing acceptor energy level and outdiffusion of Mg with increasing alloy compositionx.

 

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