Electron‐irradiation‐induced gold atom implantation into α‐SiC and β‐Si3N4has been studied by ultrahigh voltage electron microscopy (UHVEM). Bilayer films of Au(target atom)/α‐SiC (substrate) and of Au (target atom)/β‐Si3N4(substrate) were irradiated with 2‐MeV electrons in a UHVEM with the electron beam incident on the gold layer. In the Au/α‐SiC system, irradiation with 2‐MeV electrons first induces amorphization of the α‐SiC substrate, and then with continued irradiation gold atoms which have been knocked‐off from the gold layer by the collision with 2‐MeV electrons are implanted into the amorphous SiC substrate. The distribution of gold in amorphous SiC is not uniform and there exists a concentration fluctuation of gold with the average wavelength of a few to several nm. In the Au/β‐Si3N4system, it seems difficult to implant gold atoms into the β‐Si3N4substrate by MeV electron irradiation. The ease with which gold implantation into ceramic substrates takes place has been discussed in terms of the chemical constraint effect.