Nitrogen-rich carbon nitride film formation by means of ion beam and vapor deposition method
作者:
Fuminori Fujimoto,
Kiyoshi Ogata,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1996)
卷期:
Volume 140,
issue 1
页码: 21-28
ISSN:1042-0150
年代: 1996
DOI:10.1080/10420159608212937
出版商: Taylor & Francis Group
关键词: Film formation;ion beam deposition;vapor deposition
数据来源: Taylor
摘要:
Carbon nitride films with 1 μm thickness were prepared on tungsten carbide (WC) and silicon wafers by Ion Beam and Vapor Deposition (IVD). Films with a composition ratio CR(C/N) = 0.5∼0.7 on WC prepared by nitrogen ions with energies lower than 800 eV showed a hardness of 6500 kgf/mm2which is comparable or greater than that of diamond. The structure of the films is amorphous. For the hardest films, it is considered that all nitrogen atoms are covalently bond to carbon atoms.
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