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Ultrauniform InxGa1−xAs layers on InP grown by molecular beam epitaxy

 

作者: Y. Matsui,   H. Hayashi,   K. Kikuchi,   S. Iguchi,   K. Yoshida,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 2  

页码: 528-530

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583168

 

出版商: American Vacuum Society

 

关键词: MOLECULAR BEAM EPITAXY;VAPOR DEPOSITED COATINGS;EPITAXIAL LAYERS;INDIUM PHOSPHIDES;ELECTRON MOBILITY;CHEMICAL COMPOSITION;INDIUM ARSENIDES;GALLIUM ARSENIDES

 

数据来源: AIP

 

摘要:

In the molecular beam epitaxial (MBE) growth of InxGa1−xAs, quite uniform and lattice‐matched In0.53Ga0.47As epilayers have been obtained over large‐size InP wafers. Composition variation of the epitaxial layer over an entire 2‐in. φ wafer is less than ±0.7%; that is, the difference of lattice mismatch between the center and the edge of the wafer is less than 1×10−3. Around the center, composition variation is less than ±0.25% over lateral dimension of 2.5 cm. In this 2‐in. φ epitaxial wafer, the relation between electron mobility and lattice mismatch is also studied.

 

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